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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1939 DESCRIPTION With TO-3P(I) package Complement to type 2SC5196 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER CONDITIONS Collector-base voltage IN Collector-emitter voltage Emitter-base voltage ANG CH SEM E Open emitter Open base Open collector OND IC TOR UC VALUE -80 -80 -5 -6 -0.6 UNIT V V V A A W ae ae Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 60 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA; IB=0 IC=-5 A;IB=-0.5A IC=-3A ; VCE=-5V VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-3A ; VCE=-5V IC=-1A ; VCE=-5V IE=0; VCB=-10V;f=1MHz 55 35 30 MIN -80 2SA1939 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -2.0 -1.5 -5 -5 160 |I |I V V A A Output capacitance O 80-160 hFE-1 classifications R 55-110 HAN INC SEM GE OND IC TOR UC 180 MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1939 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1939 SEM GE HAN INC OND IC TOR UC 4 |
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